3. Ecole Nationale Superieure d'Ingenieurs de Caen et Centre de Recherche

The activity of LERMAT in PARSEM is focused on two topics: i)analysis of defects and interfaces by HREM and STEM, image processing allowing determination of element distribution ii) energetic calculation and electronic structure of defect and interfaces in connection with the growth process and the final devices. The group consists of two senior researchers ( Dr. Gerard Nouet, Directeur de Recherche CNRS (50%) and Dr. Pierre Ruterana, Charge de Recherche CNRS (30%) and three experienced researchers (Dr. Jun Chen, Maitre de Conferences, Universite de Caen (50%), Dr. Magali Morales, Maitre de Conferences, Universite de Caen and Dr. Philippe Marie, Maitre de Conferences, Universite de Caen (30%) ).

Dr. G. Nouet has been involved in investigation of the crystallographic structure of defects and interfaces for more than 25 years. He has contributed to the basic extension of crystallographic concepts of interface analysis out of the cubic system. In HREM investigations he implemented a strong coupling between theoretical modelling and experimental work, since more than ten years ago, this has now become standard in many Laboratories. He has contributed to more than 120 scientific articles (refereed) in the field of materials science. From the start of the EC Research Programme, he has participated to 5 projects in the Human Capital Programme and has managed bilateral and national collaborations.

Dr. P. Ruterana has been involved in transmission electron microscopy investigations for 20 years. His skills are HREM, Nanoanalysis and Convergent Beam Diffraction as well as weak beam. During the last ten years, his research activities have been focused on the atomic structure of defects and interfaces in materials with hexagonal symmetry. He has contributed to more than 100 scientific articles in refereed journals. Until now, he has participated in two EC projects and is now coordinator of the RTN project: Interface analysis at atomic level and Properties of Advanced Materials (IPAM: HPRN-CT-1999-00040) whose research effort is to contribute to a fundamental understanding of the role of the defects on the properties of GaN epitaxial layers and help improve their quality.

Dr J. Chen has been involved in interface analysis for nearly ten years now. His expertise lies in total energy modelling of defects in order to determine the equilibrium configurations. His input is essential for determining the intimate structure of defects and interfaces by image simulations and HREM. He has contributed to nearly 20 refereed journal articles and 3 European contracts.

Dr M. Morales is specialist in quantitative determination using diffrac tion of radiations (x-rays, synchrotron and neutrons). Her involvement on many thin films and bulk materials encompasses ab initio structural determination of nuclear and magnetic structures, quantitative texture and phase analyses, anisotropic particle sizes and microstrain determinations. Her input will focus on the characterisation of our epitaxial layers using the full combined approaches by x-rays diffraction. She is author or coauthor of 15 refereed journal articles and presented her work in 10 international and national conferences. She contributed as an associate researcher in the RTD European contract ESQUI which ended in February 2003.