Joint Publications

Peer Reviewed - Articles in Journals:

A.1. Partial dislocations in wurtzite GaN,

Ph. Komninou, J. Kioseoglou, G. P. Dimitrakopulos, Th. Kehagias, and Th.

Karakostas.

Phys. Stat. Sol. (a) 202, 2888-2899 (2005).

A.2. Mixed partial dislocation core structure in GaN by high resolution electron

Microscopy,

J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, Th. Kehagias, and Th.

Karakostas.

Phys. Stat. Sol. (a) 203, 2156-2160 (2006).

A.3. Growth and characterisation of semi-polar (11-22) InGaN/GaN/GaN MQW

Structures,

M. J. Kappers, J. L. Hollander, C. McAleese, C. F. Johnston, R. F. Broom,

J. S. Barnard, M. E. Vickers, and C. J. Humphreys.

J. Cryst. Growth 300, 155-159 (2007).

A.4. Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers,

M. J. Kappers, R. Datta, R. A. Oliver, F. D. G. Rayment, M. E. Vickers, and

C. J. Humphreys.

J. Cryst. Growth 300 , 70-74 (2007).

A.5. New core configuration of the - edge dislocation in wurtzite GaN,

I. Belabbas , J. Chen, M. Akli Belkhir, P. Ruterana and G. Nouet.

Phys. Stat. Sol. (c) 3 , 1733-1737 (2006)

A.6. Atomic structure of dislocations in nitride semiconductors,

S. Petit, A. Bere , J. Chen, I. Belabbas , P. Ruterana and G. Nouet.

Phys. Stat. Sol. (c) 3 , 1771-1774 (2006).

A.7. The atomic and electronic structure of dislocations in Ga based nitride

Semiconductors.

I. Belabbas , P. Ruterana, J. Chen and G. Nouet,

Phil. Mag. 86 , 2241-2269 (2006)

A.8. Ab-initio tight-binding study of the core structures of the - edge dislocation in

wurtzite GaN.

I. Belabbas , J. Chen, M. Akli Belkhir, P. Ruterana and G. Nouet,

Phys. Stat. Sol. (a) 203 , 2167-2171 (2006).

A.9. Local electronic structure of threading screw dislocation in wurtzite GaN,

I. Belabbas , M. A. Belkhir, Y. H. Lee, J. Chen, A. Bere , P. Ruterana, and G.

Nouet.

Comp. Mater. Sci. 37 , 410-416 (2006)

A.10. Atomic structure and relative stability of gallium and nitrogen in GaN [0001]

grain boundaries,

A. Bere , I. Belabbas, S. Petit, G. Nouet, P. Ruterana, J. Chen and J. Koulidiati.

Phys. Stat. Sol. (a) 203 , 2176-2180 (2006).

A.11. Stillinger-Weber parameters for In and N atoms,

H. P. Lei , J. Chen, S. Petit, P. Ruterana, X.Y. Jiang and G. Nouet.

Superlattices and Microstructures 40 , 464-469 (2006)

A.12. Characterization of structural defects in GaN films grown on

sapphire substrates ,

P. Vennegues, F. Mathal, and Z. Bougrioua.

Phys. Stat. Sol. (c) Vol. 3/6 , 1658-1661 (2006)

A.13. Epitaxial orientation of III-Nitrides grown on R-plane sapphire by

metalorganic-vapor-phase-epitaxy,

P. Vennegues and Z. Bougrioua.

Appl. Phys. Lett. 89 , 111915 (2006)

A.14. High indium content AlInGaN films: growth, structure and optoelectronic properties ,

M. Nemoz, E. Beraudo, P. De Mierry, P. Vennegues and L. Hirsch.

Phys. Stat. Sol (c) 4 , 137-140 (2007).

A.15. Reduction of Stacking Faults in (11-20) and (11-22) GaN Films by ELO

Techniques and Benefit on GaN Well's emission,

Z. Bougrioua, M. Laugt, P. Vennegues, I. Cestier, T. Guhne, E. Frayssinet,

P. Gibart and M. Leroux.

Phys. Stat. Sol. (a) 204 , 282-289 (2007).

A.16. Quantum well-free nitride-based UV LEDs emitting at 380 nm,

P. de Mierry, F. Tinjod, S. Chenot, and D. Lancefield.

Phys. Stat. Sol (c), in press.

A.17. Band gap and band parameters of InN and GaN from quasiparticle energy

calculations based on exact-exchange density functional theory,

P. Rinke, A. Qteish, M. Winkelnkemper, M. Binberg, J. Neugebauer, M.

Scheffler.

Appl. Phys. Let. 89 , 161919 (2006)

A.18. Generalized Wannier Functions: An efficient way to construct ab initio tight

Binding parameters for group-III nitrides,

M. Wahn and J. Neugebauer.

Phys. Stat. Sol. (b) 243 , 1583-1587 (2006)

A.19. Low dislocation density high quality thick HVPE GaN layers,

Y. Andre, A. Trassoudaine, J. Tourret, R. Cadoret, E. Gil, D. Castelluci,

O. Aoude and P. Disseix.

J. Cryst. Growth 306 , 86 (2007).

A.20. Nonlinear piezoelectric properties of GaN quantum dots nucleated at the edge of

threading dislocations,

P. Dluzewski, T. D. Young , G. Jurczak and J. A. Majewski.

Phys. Stat. Sol. (c) 4 , 2399-2402 (2007).

A.21. A hybrid atomistic-continuum finite element modelling of nanoindentation and

experimental verification for copper crystal,

P. Dluzewski, M. Mazdziarz, P. Traczykowski, G. Jurczak, K. Niihara,

K. Kurzydlowski, and R. Nowak.

Comp. Assist. Mech. Engng. Sci., in press

A.22. Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE

on high resistivity Fe-doped GaN,

E. Iliopoulos, M. Zervos , A. Adikimenakis, K. Tsagaraki , A. Georgakilas.

Superlattices and Microstructures 40, pp. 313-319 (2006).

A.23. Effects of ion implantation on the mechanical behavior of GaN films

P. Kavouras, Ph. Komninou, Th. Karakostas

Thin Solid Films 515 , 3011-3018 (2007) .

A.24. Study of the structural and optical properties of GaN/AlN quantum dot superlattices,

N. Skoulidis, V. Vargiamidis, and H. M. Polatoglou.

Superlattices and Microstructures 40 , 432-439 (2006).

A.25. Atomistic modeling of the (a+c)-mixed dislocation core in wurtzite GaN,

I. Belabbas , A. Bere , J. Chen, S. Petit, M. A. Belkhir, P. Ruterana, and G. Nouet.

Phys. Rev. B 75 , 115201 (2007).

A.26. 3D modelling of misfit networks in the interface region of heterostructures,

T. D. Young , J. Kioseoglou, G. P. Dimitrakopulos, P. Dluzewski, and Ph. Komninou.

J. Phys. D: Appl. Phys. 40 , 4084-4091 (2007).

A.27. Dislocation core investigation by geometric phase analysis and the dislocation density

tensor,

J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas, and E. C. Aifantis

J. Phys. D : Appl. Phys. 41 , 035408 (2008).

A.28. Study of structural properties of planar defects and a-edge threading dislocations in

III(Al,Ga,In)-N by interatomic potential calculations,

J. Kioseoglou, Ph. Komninou, and Th. Karakostas.

J. Phys. Cond. Matt. (accepted, in press).

A.29. Study of InN/GaN interfaces using molecular dynamics,

J. Kioseoglou, E. Kalessaki , G. P. Dimitrakopulos, Ph. Komninou, and Th. Karakostas.

J Mater Sci 43 , 3982-3988 (2008)

A.30. Interatomic potential calculations of III(Al,In)-N planar defects with a III-species

environment approach,

J. Kioseoglou, Ph. Komninou, and Th. Karakostas.

Phys. Stat. Sol. (b) 245 , 1118-1124 (2008).

A.31. Core structure of the a-edge dislocation in InN ,

H. P. Lei , P. Ruterana, G. Nouet, X. Y. Jiang, and J. Chen.

Appl. Phys. Lett. 90 , 111901 (2007).

A.32 . InN clusters in In x Ga 1-x N/GaN quantum wells: analysis of bond lengths,

H. Lei , X. J. Jiang, J. Chen, I. Belabbas , P. Ruterana, G. Nouet.

Phys. Stat. Sol. (c) 4 , 2449-2452 (2007).

A.33. Ionization energy of GaN point defects,

A. Bere , I. Belabbas , G. Nouet, P. Ruterana, J. Chen, G. Segda, J. Koulidiati.

Phys. Stat. Sol. (c) 4 , 2593-2596 (2007).

A.34. Investigation of the atomic core structure of the -mixed dislocation in wurtzite

GaN,

I. Belabbas , A. Bere , J. Chen, P. Ruterana, G. Nouet.

Phys. Stat. Sol. (c) 4 , 2940-2944 (2007).

A.35. Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown non-polar (11-20) and

semi-polar (11-22) GaN templates in relation with microstructural characterization,

T. Guhne , M. Albrecht, Z. Bougrioua, P. Vennegues, and M. Leroux .

J. Appl. Phys., 101 , 113101 (2007).

A.36. Microstructural characterization of semipolar GaN templates and epitaxial-lateral-

overgrown films deposited on M-plane sapphire by metalorganic-vapor-phase-epitaxy,

P. Vennegues, Z. Bougrioua and T. Guehne .

Jpn. J. Appl. Phys, 46 , n° 7A, 4089 (2007).

A.37. High indium content AlInGaN films: growth, structure and optoelectronic properties,

M. Nemoz, E. Beraudo , P. De Mierry, P. Vennegues and L. Hirsch,

Phys. Stat. Sol. ( c), 4 , n°1, p. 137-140 (2007).

A.38. Reduction of stacking faults in (11-20) and (11-22) GaN films by ELO techniques and

benefit on GaN wells emission,

Z. Bougrioua, M. Laugt, P. Vennegues, I. Cestier, T. Guhne , E. Frayssinet, P. Gibart, and

M. Leroux,

Phys. Stat. Sol. (a) 204 , n°1, 282-289 (2007).

A.39. Growth of free-standing GaN using pillar-epitaxial lateral overgrowth from GaN

nanocolumns,

Z. Bougrioua, P. Gibart, E Calleja, U. Jahn, A. Trampert, J. Ristic, M. Utrera, G. Nataf.

Cryst. growth, 309 , 113 (2007).

A.40. Demonstration of semipolar (11-22) InGaN / GaN blue-green light emitting diode,

T. Guhne , P. DeMierry, M. Nemoz, E. Beraudo, S. Chenot and G. Nataf.

Electronics Letters 44 , 3, pp 231 (2008) .

A.41. Band-edge photoluminescence and reflectivity of nonpolar ( 11-20) and semipolar ( 11-22)

GaN formed by epitaxial lateral overgrowth on sapphire,

T. Guhne , Z. Bougrioua, S. Laugt , M. Nemoz, P. Vennegues, B. Vinter, and M. Leroux.

Physical Review B 77 , 075308 ( 2008 ).

A.42. Low cost high quality GaN by one step growth,

J. Tourret , O. Gourmala , A. Trassoudaine, Y. Andre, E. Gil, D. Castelluci and R. Cadoret .

J. Crystal Growth 310 , 924 (2008).

A.43. Nonlinear field theory of stress induced diffusion and mass transport,

P.Dluzewski.

Diffusion and Defect Data 264 , pp. 63-70 (2007) .

A.44. Analysis of biaxial strain in InN (0001) epilayers grown by molecular beam epitaxy ,

E. Dimakis, J. Domagala, E. Iliopoulos, A. Adikimenakis and A. Georgakilas.

Phys. Stat. Sol. (a) 204 , pp. 1996-1999 (2007).

A.45. Role of conduction-band filling in the dependence of InN photoluminescence on

hydrostatic pressure,

A. Kaminska, G. Franssen, T. Suski, I. Gorczyca, N. E. Christensen, A. Svane, A.

Suchocki, H. Lu, W. J. Schaff, E. Dimakis and A. Georgakilas.

Phys. Rev. B 76 , 075203 (2007).

A.46. Bowing of the band gap pressure coefficient in In x Ga 1-x N alloys,

G. Franssen, I. Gorczyca, T. Suski, A. Kaminska, J. Pereiro, E. Munoz, E. Iliopoulos, A.

Georgakilas, S. B. Che, Y. Ishitani, A. Yoshikawa, N. E. Christensen and A. Svane .

J. Appl. Phys. 103 , 033514 (2008).

A.47. TEM Investigations of (In,Ga)N/GaN Laser Structures,

P. Manolaki , I. Hausler, H. Kirmse, W. Neumann, J. Smalc , and J. Kozubowski.

Microscopy and Microanalysis, 13 Suppl. 3, 324 (2007).

A.48. Composition analysis of ternary semiconductors by combined application of conventional

TEM and HRTEM,

Hausler, H. Kirmse, W. Neumann.

Microscopy and Microanalysis, 13 Suppl. 3, 320 (2007).

A.49. Mechanism of LiAlO 2 decomposition during the GaN growth on (100) g -LiAlO 2 ,

A. Mogilatenko, W. Neumann, E. Richter, M. Weyers, B. Velickov, R. Uecker.

J. Appl. Phys. 102 , 023519 (2007).

A.50. Structural Analysis of c-plane GaN Layers Grown on (100) g -LiAlO 2 ,

A. Mogilatenko, E. Richter, W. Neumann , M. Weyers, B. Velickov, R. Uecker.

Microscopy and Microanalysis, 13 Suppl. 3, 326 (2007).

A.51. Analysis of materials modifications caused by UV laser micro drilling of via holes in

AlGaN/GaN transistors on SiC,

T. Wernicke, O. Kruger, M. Herms, J. Wurfl, H. Kirmse, W. Neumann, Th. Behm, G.

Irmer, G. Trankle.

Applied Surface Science 253 , 8008-8014 (2007).

A.52. Equilibrium critical thickness for misfit dislocations in III-nitrides,

D. Holec , Y. Zhang, D. V. S. Rao , M. J. Kappers, C. McAleese, and C. J. Humphreys.

J. Appl. Phys. 104 , 123514 (2008).

A.53. Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN : a theoretical

study using the Wien2k and Telnes programs,

D. Holec , P. M. F. J Costa, P. D. Cherns, and C. J. Humphreys.

Micron, 39 (6), 690 - 697, (2008).

A.54. Theoretical study of ELNES spectra of Al x Ga 1-x N using Wien2k and Telnes

programs ,

D. Holec , P. M. F. J. Costa, P. D. Cherns, and C. J. Humphreys.

Comp. Mater. Sci. 44 (1), 91 - 96 (2008).

A.55. Calculations of equilibrium critical thickness for non-polar wurtzite InGaN/GaN systems,

D. Holec and C. J. Humphreys.

Materials Science Forum 567/568 , 209 - 212 (2008).

A.56. Critical Thickness Calculations for InGaN/GaN,

D. Holec , P. M. F. J. Costa, M. J. Kappers, and C. J. Humphreys.

J. Cryst. Growth 303 (1), 314 - 317 (2007).

A.57. Palladium-based on-wafer electroluminescence studies of GaN-based LED structures ,

C. Salcianu , E. J. Thrush, R. G. Plumb, A. R. Boyd, O. Rockenfeller, D. Schmitz, M.

Heuken, and C. J. Humphreys.

phys. stat. sol. (c) 5 , 2219-2221 (2008).

A.58. Microstructure analysis in strained-InGaN/GaN multiple quantum wells,

H. Lei , J. Chen, X. Jiang, G. Nouet.

Microelectronics Journal 40 , 342 - 345 (2009).

A.59. TEM study of c-plane GaN layers grown on LiAlO2(100),

A. Mogilatenko, W. Neumann, E. Richter, M. Weyers, B. Velickov, R. Uecker.

phys. stat. sol. (c) 5 , 3712 - 3715 (2008).

A.60. Effect of the AlN nucleation layer growth on AlN material quality,

O. Reentila, F. Brunner, A. Knauer, A. Mogilatenko, W. Neumann, H. Protzmann, M.

Heuken, M. Kneissl, M. Weyers, G. Trankle.

Journal of Crystal Growth 310 , 4932 - 4934 (2008).

A.61. Composition Analysis of Ternary Semiconductors by Combined Application of Conventional

TEM and HRTEM ,

I. Hausler, H. Kirmse, W. Neumann.

phys. stat. sol. (a) 205 , 2598 - 2602 (2008).

A.62. Structural characterization of quantum dots by X-ray diffraction and TEM,

R. Kohler, W. Neumann, M. Schmidbauer, M. Hanke, D. Grigoriev, P. Schafer, H. Kirmse, I.

Hausler, R. Schneider.

In: Semiconductor Nanostructures (Edited by D. Bimberg, Springer Verlag, Berlin ), p. 97 -

122 (2008).

A.63. Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode,

T. Guhne , P. DeMierry, M. Nemoz, E. Beraudo , S. Chenot and G. Nataf.

Electronics Letters 44 , 231 (2008).

A.64. Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22)

GaN formed by epitaxial lateral overgrowth on sapphire,

T. Guhne , Z. Bougrioua, S. Laugt , M. Nemoz, P. Vennegues, B. Vinter, and M. Leroux.

Phys. Rev. B 77 , 075308 (2008).

A.65. Comparison between polar (0001) and semipolar (11-22) nitride blue-green light-emitting

diodes grown on c-plane and m-plane sapphire substrates,

P. de Mierry, T. Guehne , M. Nemoz, S. Chenot, E. Beraudo, and G. Nataf.

Jpn. J. Appl. Phys. 48 , 031002 (2009).

A.66. Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched

to GaN,

H. P. D. Schenk, M. Nemoz, M. Korytov, P. Vennegues, A. D. Dr a ger, A. Hangleiter.

Appl. Phys. Lett. 93 , 1081116 (2008).

A.67. AlInN confinement layers for edge emitting III-Nitrides laser structures,

D. Schenk, M. Nemoz, M. Korytov, P. Vennegues, P. Demolon, A. D. Dr a ger, A. Hangleiter,

R. Charash, P. Maaskant, B. Corbett, and J. Y. Duboz.

Phys. stat. sol. (c) 6 , 5897 - 5901 (2009).

A.68. Low cost high quality GaN by one step growth,

J. Tourret , O. Gourmala , A. Trassoudaine, Y. Andre, E. Gil, D. Castelluci and R. Cadoret .

Journal of Crystal Growth 310 , 924 (2008).

A.69. A complete crystallographic study of GaN epitaxial morphologies in selective area growth by

hydride vapour phase epitaxy (SAG-HVPE),

J. Tourret , O. Gourmala , A. Trassoudaine, Y. Andre, E. Gil, D. Castelluci and R. Cadoret .

Journal of Crystal Growth 311 , 1460 (2009).

A.70. A hybrid atomistic - continuum finite element modelling of nanoindentation and experimental

verification for copper crystal,

P. Dluzewski, M. Mazdziarz, G. Jurczak, P. Traczykowski, S. Nagao, R. Nowak, K.

Kurzydlowski.

Comp. Assist. Mech. Appl. Sci. 15 (2008).

A.71. Topological form of a classical continuum theory of crystalline defects ,

A. Belkadi , T. D. Young , and P. Dluzewski.

phys. stat. sol. (c) 5 , 3728 (2008).

A.72. Influence of strain and polarization on electronic properties of GaN/AlN quantum dot,

T. D. Young and O. Marquardt

phys. Stat. sol. (c) 6 , 5557 (2008).

A.73. Study of InN/GaN interfaces using molecular dynamics ,

J. Kioseoglou, E. Kalesaki , G. P. Dimitrakopulos, Ph. Komninou, and Th. Karakostas.

J. Mater. Sci. 43 , 3982 - 3988 (2008).

A.74. Dislocation core investigation by Geometric Phase Analysis and the Dislocation Density

Tensor,

J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, Th. Karakosts, and E. C. Aifantis.

J. Phys. D: Appl. Phys. 41, 1 - 8 (2008).

A.75. Interatomic potential calculations of III(Al,In)-N planar defects with a III-species

environment approach,

J. Kioseoglou, Ph. Komninou, and Th. Karakostas.

phys. stat. sol. (b) 245 , 1118 - 1124 (2008).

A.76. Fano effect in quasi-one-dimensional wires with short- or finite-range impurities,

V. Vargiamidis, Ph. Komninou, and H. M. Polatoglou

phys. stat. sol. (c) 5 , 3813 - 3817 (2008).

A.77. Temperature dependent EXAFS of InN ,

M. Katsikini, F. Pinakidou, E. C. Paloura, Ph. Komninou, A. Georgakilas, E. Welter.

phys. stat. sol. (a) 205 , 2611 - 2614 (2008).

A.78. Energetics of oxygen adsorption and incorporation at InN polar surface: A first - principles

study ,

A. Belabbes , J. Kioseoglou, Ph. Komninou, and Th. Karakostas.

phys. stat. sol. (c) 6 , S364 (2008).

A.79. Palladium-based on-wafer electroluminescence studies of GaN-based LED structures ,

C. O. Salcianu , E. J. Thrush, R. G. Plumb, A. R. Boyd, O. Rockenfeller, D. Schmitz.

phys. stat. sol. (c) 5 , 2219 - 2221 (2008).

A.80. Magnesium adsorption and incorporation in InN (0001) and (000-1) surfaces: a first

-principles study ,

A. Belabbes , J. Kioseoglou, Ph. Komninou, G. A. Evangelakis, M. Ferhat, and Th.

Karakostas.

Appl. Surf. Sci. 255 , 8475-8482 (2009).

A.81. Core models of a-edge threading dislocations in wurtzite III( Al , Ga ,In)-Nitrides ,

J. Kioseoglou, Ph. Komninou, and Th. Karakostas.

phys. stat. sol. (a) 206 , No. 8, 1931-1935 (2009 ).

A.82. " Interfacial structure of semipolar AlN grown on m-plane sapphire by MBE",

Th. Kehagias, L. Lahourcade, A. Lotsari, E. Monroy, G. P. Dimitrakopulos, and Ph. Komninou

phys. stat. sol. (b), submitted.

Peer Reviewed - Joint Articles in Journals:

A.83. Misfit Accommodation of compact and columnar InN epilayers grown on Ga-face

GaN (0001) by molecular-beam epitaxy,

Th. Kehagias, A. Delimitis, Ph. Komninou, E. Iliopoulos, E. Dimakis,

A. Georgakilas, and G. Nouet.

Appl. Phys. Lett. 86, 151905 1-3 (2005).

A.84. FE simulation of InGaN QD formation at the edge of threading dislocation in GaN,

P. Dluzewski, A. Belkadi , J. Chen, P. Ruterana and G.Nouet.

Phys. Stat. Sol. (c) 4 , 2403-2406 (2007).

A.85. Structural properties of 10 μ m thick InN grown on sapphire (0001),

E. Dimakis, J. Domagala, A. Delimitis, Ph. Komninou, A. Adikimenakis,

E. Iliopoulos, and A. Georgakilas.

Superlattices and Microstructures 40, pp. 246-252 (2006)

A.86. InN quantum dots grown on GaN (0001) by molecular beam epitaxy,

E. Dimakis, A. Georgakilas, E. Iliopoulos, K. Tsagaraki , A. Delimitis, and Ph.

Komninou.

Phys. Stat. Sol. (c) 3 , 3983-3987 (2006).

A.87. Structural and optical characterisation of thick InN epilayers grown with a single

or two step growth process on GaN (0001),

A. Delimitis, P. Gladkov, Ph. Komninou, Th. Kehagias, J. Arvanitidis, S. Ves,

M. Katsikini, E. Dimakis, and A. Georgakilas.

Phys. Stat. Sol. (a) 203, 162-166 (2006).

A.88. Raman and transmission electron microscopy characterization of InN samples

grown on GaN/Al 2 O 3 by molecular beam epitaxy,

J. Arvanitidis, M. Katsikini, S. Ves , A. Delimitis, Th. Kehagias, Ph. Komninou,

E. Dimakis, E. Iliopoulos, and A. Georgakilas.

Phys. Stat. Sol. (b) 243, 1588-1593 (2006).

A.89. Energetic of the 30° Shockley partial dislocation in wurtzite GaN,

I. Belabbas , G. Dimitrakopulos, J. Kioseoglou, A. Bere , J. Chen, Ph. Komninou,

P. Ruterana, and G. Nouet,

Superlattices and Microstructures (2006), doi:10.1016/j.spmi.2006.09.013

A.90. Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE,

G. P. Dimitrakopulos, J. Kioseoglou, E. Dimakis , A. Georgakilas, G. Nouet and

Ph. Komninou,

Phys. Stat. Sol. (a) 203 , 2151-2155 (2006)

A.91. Strain distribution of thin InN epilayers grown on (0001) GaN templates by molecular beam epitaxy,

A. Delimitis, Ph. Komninou, G. Dimitrakopulos, Th. Kehagias, J. Kioseoglou, Th. Karakostas ,

G. Nouet

Appl. Phys. Lett. 90 , 061920 (2007).

A.92. Depth profile of the biaxial strain in a 10 μ m thick InN (0001) film,

J. Arvanitidis, D. Christofilos, G. A. Kourouklis, A. Delimitis, M. Katsikini, Ph. Komninou, S.

Ves, E. Dimakis and A. Georgakilas.

J. Appl. Phys. 100 , 113516 (2006).

A.93. Atomic core configurations of the a-screw basal dislocation in wurtzite GaN,

I. Belabbas , G. Nouet, and Ph. Komninou.

J. Crystal Growth 300 , 212-216 (2007).

A.94. Axial and radial growth of Ni-induced GaN nanowires,

L. Geelhaar, C. Cheze , W. Weber, R. Averbeck, H. Riechert, Th. Kehagias, Ph. Komninou,

G. P. Dimitrakopulos, and Th. Karakostas.

Appl. Phys. Lett. 91 , 093113 (2007).

A.95. 3D modelling of misfit networks in the interface region of heterostructures,

T. D. Young , J. Kioseoglou, G. P. Dimitrakopulos, P. Dluzewski, and Ph. Komninou.

J. Phys. D: Appl. Phys. 40 , 4084-4091 (2007).

A.96. " Structural properties of ultrathin InGaN/GaN quantum wells ",

S.-L Sahonta , Ph. Komninou, G. P. Dimitrakopulos, Th. Karakostas, C. Salcianu , and E. J.

Thrush.

phys. stat. sol. (a) 205 , 2556 - 2559 (2008).

A.97. " Microstructures of defects in InGaN/GaN quantum well heterostructures "

S.-L. Sahonta , Ph. Komninou, G. P. Dimitrakopulos, Th. Karakostas, C. Salcianu , and E. J.

Thrush.

J. Phys.: Conf. Ser. 126 , 012048 (2008).

A.98. " Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN

nanowire growth " ,

L. Lari , R. T. Murray, T. J. Bullough, P. R. Chalker, M. Gass, C. Cheze , L. Geelhaar, and H.

Riechert.

Physica E 40 , 2457 (2008).

A.99. Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE,

L. Lari , R. T. Murray, M. H. Gass, T. J. Bullough, P. R. Chalker, J. Kioseoglou, G. P.

Dimitrakopulos, Th. Kehagias, Ph. Komninou, Th. Karakostas, C. Cheze , L. Geelhaar, and H.

Riechert.

phys. stat. sol. (a) 205 , 2589 - 2592 (2008).

A.100. TEM investigations of (In,Ga)N/GaN quantum structure,

P. Manolaki , I. Hausler, H. Kirmse, W. Neumann, J. Smalc , and C. Skierbiszewski.

phys. stat. sol. (c) 205 , 2573 - 2576 (2008).

A.101. Computer-assisted analysis of TEM diffraction contrast images of (In,Ga)N/GaN

nanostructures ,

P. Manolaki , I. Hausler, H. Kirmse, A. Mogilatenko, W. Neumann, J. Smalc , and C.

Skierbiszewski.

phys. stat. sol. (c) 5 , 3732 - 3735 (2008).

A.102. Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy,

G. P. Dimitrakopulos, Ph. Komninou, Th. Kehagias, S.-L. Sahonta , J. Kioseoglou, N.

Vouroutzis, I. Hausler, W. Neumann, E. Iliopoulos, A. Georgakilas, and Th. Karakostas.

phys. stat. sol. (a) 205 , 2569 - 2572 (2008).

A.103. Step-induced misorientation of GaN grown on r-plane sapphire,

J. Smalc , G. P. Dimitrakopulos, S.-L. Sahonta , G. Tsiakatouras, A. Georgakilas, and Ph.

Komninou.

Appl. Phys. Lett. 93 , 021910 (2008).

A.104. Atomic - scale configuration of catalyst particles on GaN nanowires,

Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, C. Cheze , L. Geelhaar, H. Riechert, and

Th. Karakostas.

Phys. Stat. Sol. (c) 5 , 3716 - 3719 (2008).

A.105. Effect of composition on the bonding environment of In in InAlN and InGaN epilayers,

M. Katsikini, F. Pinakidou, E. C. Paloura, Ph. Komninou, E. Iliopoulos, A. Adikimenakis, A.

Georgakilas, E. Welter.

phys. stat. sol. (a) 205 , 2593 - 2597 (2008).

A.106. Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE,

A. Adikimenakis, S.-L. Sahonta , G. P. Dimitrakopulos, J. Domagala, Th. Kehagias, Ph.

Komninou, E. Iliopoulos, and A. Georgakilas.

Journal of Crystal Growth 311 , 2010 - 2015 (2009).

A.107. Electron microscopy investigation of extended defects in a-plane gallium nitride layers

grown on r-plane sapphire by molecular beam epitaxy,

J. Smalc , Ph. Komninou, S.-L. Sahonta , J. Kioseoglou, G. Tsiakatouras, A. Georgakilas.

phys. stat. sol. (c) 5 , 3748 - 3751 (2008).

A.108. Atomic - scale configuration of catalyst particles on GaN nanowires,

Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, C. Cheze , L. Geelhaar, H. Riechert, and

Th. Karakostas.

phys. stat. sol. (c) 5 , 3716 (2008).

A109. Polar AlN/GaN interfaces: Structures and energetics ,

J Kioseoglou , E Kalesaki , L Lymperakis , G P Dimitrakopulos , Ph Komninou and Th Karakostas

phys. stat. sol. (a) 206 , 1892-1897 (2009).

A.110. Mechanism of Compositional Modulations in Epitaxial InAlN Films Grown by Molecular

Beam Epitaxy,

S.-L. Sahonta , G. P. Dimitrakopulos, A. Adikimenakis, Th. Kehagias, J. Kioseoglou, E.

Iliopoulos, A. Georgakilas, H. Kirmse, W. Neumann, and Ph. Komninou.

Appl. Phys. Lett. 95 , 021913 (2009).

A.111. Indium migration paths in V-defects of MOCVD grown InAlN,

Th. Kehagias, G. P. Dimitrakopulos, J. Kioseoglou, H. Kirmse, C. Giesen, M. Heuken, A.

Georgakilas, W. Neumann, Th. Karakostas, and Ph. Komninou.

Appl. Phys. Lett. 95 , 071905 (2009).

A.112. Electron microscopy of InGaN nanopillars spontaneously grown on Si (111) substrates,

Th. Kehagias, I. Kerasiotis, A. P. Vajpeyi , I. Hausler, W. Neumann, A. Georgakilas, G. P.

Dimitrakopulos, and Ph. Komnninou.

phys. stat. sol. (b), submitted.

A.113. Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-

AlN buffer layer,

G. P. Dimitrakopulos, Th. Kehagias, A. Ajagunna, J. Kioseoglou, I. Kerasiotis, G. Nouet,

A. P. Vajpeyi , Ph. Komninou, and Th. Karakostas.

phys. stat. sol. (a), submitted.

A.114. Morphology of semipolar GaN quantum dots in AlN matrix,

E. Kalesaki, J. Kioseoglou, Th. Kehagias, A. Lotsari, L. Lahourcade, E. Monroy, H. Kirmse 2 ,

W. Neumann, G. P. Dimitrakopulos, and Ph. Komninou.

phys. stat. sol. (a), submitted.

A.115. Catalyst-free versus catalyst-induced GaN nanowires,

L. Geelhaar, C. Cheze , O. Brandt, H. Riechert, S. Munch, R. Rothemund, S. Reitzenstein, A.

Forchel, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, and Theodoros Karakostas.

phys. stat. sol. (c), submitted.

A.116. Heteroepitaxial structure and defects of III-nitride epilayers grown on r-plane and m-plane

sapphire,

G . P . Dimitrakopulos , Th . Kehagias , J . Kioseoglou , L . Lahourcade , J . Smalc - Koziorowska ,

G . Tsiakatouras , A . Lotsari , E . Kalesaki , Th . Karakostas , E . Monroy , A . Georgakilas and Ph .

Komninou.

phys. stat. sol. (b), submitted.

A.117. S tructural properties of GaN quantum dots in semipolar AlN ,

E. Kalesaki, L. Lahourcade, J. Kioseoglou, Th. Kehagias, A. Lotsari, H. Kirmse, W.

Neumann, E. Monroy, G. P. Dimitrakopulos, Th. Karakostas and Ph. Komninou

phys. stat. sol. (b), submitted.

Peer Reviewed - Articles in Conference Proceedings:

C.1. Electron microscopy characterization of an AlN/GaN multilayer grown by plasma

assisted MBE,

G. Dimitrakopoulos, Ph. Komninou, J. Kioseoglou, Th. Kehagias, A. Delimitis,

Th. Karakostas.

Proceedings of the European Workshop on III-Nitride Semiconductor Materials

and Devices , Crete , 18-20 September 2006, pp. 93-94

C.2. Analysis of partial dislocation core structure in GaN: an implementation of the

integrated methodology for the microstructural and energetical characterization

of interfacial defects,

J. Kioseoglou, G. P. Dimitrakopoulos, Ph. Komninou, Th. Kehagias, and

Th. Karakostas.

Proceedings of the European Workshop on III-Nitride Semiconductor Materials

and Devices , Crete , 18-20 September 2006, pp. 100-101

C.3. Atomic configuration of partial dislocations by quantitative HRTEM analysis,

J. Kioseoglou, G. P. Dimitrakopoulos, Ph. Komninou, Th. Kehagias and Th.

Karakostas.

Proceedings of ΝΝ 06, 3 rd Workshop on Nanosciences & Nanotechnologies , 23

(2006).

C.4. Gradient elasticity of localized boundary dislocations in nanosized stacking faults

in GaN,

J. Kioseoglou, G. P. Dimitrakopoulos, Ph. Komninou, Th. Karakostas,

I. konstantopoulos, M. Avlonitis, E. C. Aifantis.

Proceedings of ΝΝ 06, 3 rd Workshop on Nanosciences & Nanotechnologies , 133

(2006).

C.5. Atomic core structure of 90 o bent - screw dislocation in wurtzite GaN,

I. Belabbas , A. Bere , J. Chen, P. Ruterana and G. Nouet.

10th China-Korea Advanced Materials Center Workshop, Huangshan , China ,

August 20-25, 2006.

Rare metals 25 , pp. 1-4 (2006)

C.6. The atomic configurations of coincidence tilt grain boundaries around <0001> in

GaN,

J. Chen, P. Ruterana, G. Yu and G. Nouet.

Proceedings of the C-MRS Symposium, Beijing , China , June 26-30, 2006.

C.7. Stillinger-Weber parameters for InN : application to In x Ga 1-x N,

H. Lei , X. Y. Jiang, Guanghui Yu, J. Chen, S. Petit, P. Ruterana and G. Nouet.

Proceedings of the C-MRS Symposium, Beijing , China , June 26-30, 2006.

C.8. Investigation of the atomic core structure of the - mixed dislocation in

wurtzite GaN,

I. Belabbas , A. Bere , J. Chen, S. Petit, M. A. Belkhir, P. Ruterana, and G. Nouet.

Proceedings of the EDS 2006, Halle , Germany , September 17-22, 2006.

C.9. Analysis of In x Ga 1-x N/GaN Quantum Wells by Stillinger-Weber Potential Method,

H. Lei , J. Chen, S. Petit and G. Nouet.

Proceedings of the EDS 2006, Halle , Germany , September 17-22, 2006.

C.10. Structural and chemical characterization of (In,Ga)N quantum dot structures by

TEM nano-scale analysis,

H. Kirmse, I. Hausler, I. Hahnert, W. Neumann, A. Strittmatter, U. W. Pohl, D.

Bimberg.

Proceedings of the International Microscopy Congress, IMC 16, Vol. 3 , 1497 (2006).

C.11. Analysis of stresses of In-rich clusters in In x Ga 1-x N/GaN Quantum Wells,

H. P. Lei , X. Y. Jiang , J. Chen, P. Ruterana, and G. Nouet.

Proceedings of the E-MRS Spring meeting , Strasbourg , May 28- June 1, 2007.

C.12. TEM Characterization of Self-Organized (In,Ga)N Quantum Dots,

H. Kirmse, I. Hausler, W. Neumann, A. Strittmatter, L. Rei?mann, D. Bimberg.

Inst. Phys. Conf. Series Proc. 15th Conf. on Microscopy of Semiconducting Materials ,

Cambridge , 2007.

C.13. Growth of c-plane GaN Films on (100) g -LiAlO 2 by Hydride Vapour Phase Epitaxy ,

A. Mogilatenko, W. Neumann, E. Richter, M. Weyers, B. Velickov, R. Uecker.

Inst. Phys. Conf. Series Proc. 15th Conf. on Microscopy of Semiconducting Materials ,

Cambridge , 2007.

C.14. Low cost high quality GaN by one step growth,

J. Tourret, O. Gourmala , A. Trassoudaine, Y. Andre, E. Gil, D. Castelluci, R. Cadoret.

Proceedings of the E-MRS Spring Meeting , Strasbourg , France , May 28 - June1 2007.

C.15. GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE,

D. Zhu, C. McAleese, K. K. McLaughlin, M. Haberlen, C. O. Salcianu , E. J. Thrush, M. J.

Kappers, P. Lane , D. Wallis, T. Martin, M. Astles, S. Thomas, A. Pakes, M. Heuken, C. J.

Humphreys, SPIE Conf. Proc. 2009 , to be published.

C.16. Simulation of In-rich clusters in InGaN/GaN quantum well,

H. P. Lei , X. Y. Jiang , J. Chen, P. Ruterana, and G. Nouet.

Proceedings of the E-MRS Spring meeting , Strasbourg , May 26-30, 2008.

C.17. Growth of c-plane GaN Films on (100) g -LiAlO 2 by Hydride Vapour Phase Epitaxy ,

A. Mogilatenko, W. Neumann, E. Richter, M. Weyers, B. Velickov, R. Uecker,

IOP Conf. Series, Proc. 15th Conf. on Microscopy of Semiconducting Materials , April 2 - 5,

2007, Cambridge , UK .

Springer Proc. in Physics 120 (2007), ed.: A.G. Cullis, P.A. Midgley, 45-48

C.18. TEM Characterization of Self-Organized (In,Ga)N Quantum Dots,
H. Kirmse, I. Hausler, W. Neumann, A. Strittmatter, L. Rei?mann, D. Bimberg.
IOP Conf. Series, Proc. 15th Conf. on Microscopy of Semiconducting Materials , April 2 - 5,

2007, Cambridge , UK .
Springer Proc. in Physics 120 (2007), ed.: A.G. Cullis, P.A. Midgley, 233-236

A. Mogilatenko, W. Neumann, T. Wernicke, E. Richter, M. Weyers, B. Velickov, R. Uecker.

Proc. 14th European Microscopy Congress , September 1-5, 2008, Aachen , Germany
Volume 2: Materials Science, ed.: S. Richter, A. Schwedt, 73-74.

C.20. TEM analysis of the chemical gradient in (Zn,Mn)Te nanowires,

H. Kirmse, W. Neumann, S. Kret, P. Dluzewski, E. Janik, W. Zaleszczyk, A. Presz,

G. Karczewski, T. Wojtowicz.

Proc. 14th European Microscopy Congress, September 1-5, 2008, Aachen , Germany

Volume 2: Materials Science, ed.: S. Richter, A. Schwedt, 301-302.

C.21. HRTEM simulations of planar defets in ZnTe nanowires,
I. Hausler, H. Kirmse, W. Neumann, S. Kret, P. Dluzewski, E. Janik, G. Karczewski,

T. Wojtowicz

Proc. 14th European Microscopy Congress, September 1-5, 2008, Aachen , Germany

Volume 2: Materials Science, ed.: S. Richter, A. Schwedt, 133-134.

C.22. TEM investigation o f the influence of Si/N treatments on the structural defects
i n non-polar and semi-polar MOVPE-grown GaN films,

R. Chmielowski , T. Guhne , G. Nataf and P. Vennegues.

Proceedings of the E-MRS Spring Meeting, Strasbourg , France , May 26 - 30, 2008.

C.23. Polarized photoluminescence from nonpolar (11-20) (Ga,In)N/GaN quantum wells,

T. Guhne , Z. Bougrioua, M. Nemoz, T. Bretagnon, B. Gil, and M. Leroux.

Proceedings of the 29 th Int. Conf. Physics of Semiconductors , Rio de Janeiro , Brasil, August

2008.

C.24. Multiscale modeling of elastic-plastic deformation with an application to crystalline copper

with varied grain size,

P. Dluzewski, M. Mazdziarz, T. D. Young , T. Wejrzanowski, K. Kurzydlowski.

Proceedings of the 14 th International Symposium on Plasticity and its Current applications, pp.

394, 2008.

C.25. In-situ monitoring of GaN nanowire nucleation,

C. Cheze , L. Geelhaar, A. Trampert, O. Brandt, H. Riechert.

Proceedings of the MRS 2009 Spring Meeting, San Francisco , USA , April 13-17, 2009 .

C.26. Magnesium adsorption and incorporation at InN (0001) surfaces: A first-principles study,

A. Belabbes , J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, and Th. Karakostas.

Proceedings of ΝΝ 06, 5 rd Workshop on Nanosciences & Nanotechnologies , Thessaloniki ,

Greece , 2006.

C.27. Atomic scale modeling and HRTEM investigation of (Al,In)N/GaN interfaces,

J. Kioseoglou, E. Kalessaki, G. P. Dimitrakopulos, Ph. Komninou, and Th. Karakostas.

Proceedings of ΝΝ 06, 5 rd Workshop on Nanosciences & Nanotechnologies , Thessaloniki ,

Greece , 2006.

Peer Reviewed - Joint Articles in Conference Proceedings:

C.28. Epitaxial Growth of GaN Nanowires on Al 2 O 3 (0001) by Molecular Beam Epitaxy,

Th. Kehagias, Ph. Komninou, G. Dimitrakopoulos, C. Cheze , L. Geelhaar,

W. Weber, R. Averbech, H. Riechert , and Th. Karakostas.

Proceedings of the 16 th IMC International Microscopy Congress, Sapporo , Japan ,

September 2006.

C.29. Acceptor-like threading edge dislocations in In N ,

E. Dimakis, A. Delimitis, Ph. Komninou, J. Domagala, E. Iliopoulos, and

A. Georgakilas.

Proceedings of the European Workshop on III-Nitride Semiconductor Materials

and Devices , Crete , 18-20 September 2006, pp. 74

C.30. Plasma-Assisted molecular beam epitaxy of InN quantum dots on GaN (0001),

E. Dimakis, E. Iliopoulos, K. Tsagaraki , A. Delimitis, Ph. Komninou, H. Kirmse,

W. Neumann, and A. Georgakilas.

Proceedings of the European Workshop on III-Nitride Semiconductor Materials

and Devices , Crete , 18-20 September 2006, pp. 75

C.31. Microstructural characterization of InN-based thin films and nanostructures

grown on GaN templates by molecular beam epitaxy,

A. Delimitis, J. Arvanitidis, M. Katsikini, E. C Paloura, F. Pinakidou, S. Ves,

Th. Kehagias, E. Dimakis, A. Georgakilas, and Ph. Komninou.

Proceedings of the European Workshop on III-Nitride Semiconductor Materials and Devices , Crete , 18-20 September 2006, pp. 109-110

C.32. Controlled growth of GaN nanowires on (0001) Al 2 O 3 by MBE,

Th. Kehagias, Ph. Komninou, G. P. Dimitrakopoulos, C. Cheze , L. Geelhaar,

H. Riechtert, and .Th. Karakostas .

Proceedings of the European Workshop on III-Nitride Semiconductor Materials

and Devices , Crete , 18-20 September 2006, pp. 114-115

C.33. Strain fields and structural properties at nanoscale level in AlN/GaN

Heterostructures,

G. P. Dimitrakopulos, Ph. Komninou, J. Kioseoglou, Th. Kehagias, A. Delimitis,

Th. Karakostas, E. Iliopoulos , A. Adikimenakis, G. Tsiakatouras, and A. Georgakilas.

Proceedings of ΝΝ 06, 3 rd Workshop on Nanosciences & Nanotechnologies , 104

(2006).

C.34. Catalyst driven growth of GaN nanowires on Al 2 O 3 (0001) by MBE,

Th. Kehagias, Ph. Komninou, G. P. Dimitrakopoulos, C. Cheze , L. Geelhaar, H.

Riechtert, and Th. Karakostas.

Proceedings of ΝΝ 06, 3 rd Workshop on Nanosciences & Nanotechnologies , 56

(2006).

C.35. Nano-analysis of an InAlGaN/GaN multiple quantum well heterostructure,

G. P. Dimitrakopulos, Ph. Komninou, J. Kioseoglou, Th. Kehagias,

Th. Karakostas, E. Dimakis, A. Georgakilas, and G. Nouet.

Proceedings of ΝΝ 06, 3 rd Workshop on Nanosciences & Nanotechnologies , 118

(2006).

C.36. Growth Dependent Formation of Threading Dislocations in InN (0001) Films and

Their Effect on Electrical Properties,

E. Dimakis, A. Delimitis, P. Komninou, E. Iliopoulos, and A. Georgakilas.

Proceedings of the International Workshop on Nitride Semiconductors "IWN2006", Kyoto ,

Japan, October 22 - 27, 2006.

C.37. Strain Relaxation and Defect Formation in the Heteroepitaxy of AlN/GaN and

AlN/GaN Multilayers by Plasma Assisted Molecular Beam Epitaxy,

E. Ilipoulos, A. Adikimenakis, G. Tsiakatouras, G. Dimitrakopoulos,

P. Komninou, G. Nouet, and A. Georgakilas.

Proceedings of the International Workshop on Nitride Semiconductors "IWN2006", Kyoto ,

Japan, October 22 - 27, 2006.

C.38. What does an (a+c) dislocation core look like in wurtzite GaN?

I. Belabbas , A. Bere , J. Chen, S. Petit, M. A. Belkhir, P. Ruterana, G. Nouet, and

Ph. Komninou.

MRS Symposium Proceeding Series 892 (2006) FF26-10.1 - 10.6

C.39. Structural properties of InN thin films grown with variable growth conditions on

GaN/Al2O3 by plasma-assisted MBE,

A. Delimitis, Ph. Komninou, Th. Kehagias, Th. Karakostas, E. Dimakis,

A. Georgakilas, G. Nouet.

14 th International Conference on Microscopy of Semiconducting Materials,

Oxford , Angleterre, April 11-14, 2005.

Springer Proceedings in Physics, 2005, 107 , 71-74.

C.40. EELS Quantitative Analysis of AlGaN Nanowires Grown by Ni Promoted MBE on Sapphire

Substrate,

L. Lari , R. T. Murray, T. J. Bullough, P. R. Chalker, M. Gass, C. Cheze , L. Geelhaar and H.

Riechert.

Mater. Res. Soc. Symp. Proc. 1026 (2008) C01-05.

C.41. Nonlinear Elastic Effects in Group III-Nitrides: From ab-initio to Finite Element Calculation ,

M. Petrov , L. Lymperakis, J. Neugebauer, R. Stefaniuk, and P. Dluzewski.

Proceedings of the 17th International Conference on Computer Methods in Mechanics CMM

-2007 , June 19 - 22, Spala , Poland .

C.42. On the stress induced InGaN/GaN quantum wells and quantum dots,

J. Chen, H. P. Lei , P. Ruterana, G. Nouet, A. Belkadi , and P. Dluzewski.

Proceedings of the 17th Int. Conf. on Computer Methods in Mechanics , Spala, Poland (2007).

C.43. Microstructure of defects in InGaN/GaN quantum well heterostructures,

S.-L. Sahonta , Ph. Komninou, G. P. Dimitrakopulos, Th. Karakostas, C. Salcianu , and E . J.

Thrush, J. Phys.: Conf. Ser., 126 , 012048 (2008).

C. Cheze , L. Geelhaar, W. Weber, H. Riechert, Ph. Komninou, Th. Kehagias, and Th.

Karakostas.

Proceedings of the MRS 2008 Spring Meeting , San Francisco , USA , March 24-28, 2008.

C.45. Epitaxial orientations of gallium nitride grown on nitrided r-plane sapphire by Molecular

Beam Epitaxy,

J. Smalc , G. P. Dimitrakopulos, Ph. Komninou, S.-L. Sahonta , G. Tsiakatouras, and A.

Georgakilas.

Proceedings of ΝΝ 06, 5 rd Workshop on Nanosciences & Nanotechnologies , Thessaloniki ,

Greece , 2006.

C.46. A method for atomistic/continuum analysis of large HRTEM images,,

A. Belkadi , G. P. Dimitrakopulos, J. Kioseoglou, G. Jurczak, T. D. Young, P. Dluzewski, and

Ph. Komninou.

Proceedings of ΝΝ 06, 5 rd Workshop on Nanosciences & Nanotechnologies , Thessaloniki ,

Greece , 2006.